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Architecture of Ion Beam Systems
Design/Architecture of commercial ion beam systems, subsystems, and upgrades.
Participation in design projects as consultant, providing required level of support from specific technical issues to principal architect/team leader.
Ground-up designs starting from basic market needs, meeting requirements for species, dose, current, energy, purity (metals, particles, dopants, energy, beam angles, channeling).
Meeting industry standards out of the box: SEMI S2, CE, MITI etc.
Safety: High voltage, toxic materials, fire, radiation, mechanical.
Full documentation, including paper/paperless manuals.
Automation: Ergonomics, human interface, algorithms, service, reliability, startup/shutdown, failsafe data-logging.

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This picture shows the first complete SHC-80 ion implanter based on the NIST ATP award, built for Varian by Diamond Semiconductor group Inc. Embodying three patents, this system implanted the first 300mm wafers ever, using a broad, parallel, ribbon beam. It pioneered the use of active beam uniformity controls, invented by Dr. White. The system was designed for safety in the absence of an overall enclosure: only the high-voltage area was protected by interlocked doors (removed in this photo to show the construction). The system would normally be bulkhead mounted to a clean room similar to the following:
This picture is of a custom 10 MeV implanter designed, built and delivered by Diamond Semiconductor Group. Posing new challenges in the areas of radiation control and interlocks, this system provides simple recipe-driven automation from the basic parameters: ion species, energy and dose, and conforms fully to all SEMI S2 safety, documentation, ergonomic and serviceability requirements.